H5TC4G63AFR-G7A vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of H5TC4G63AFR-G7A by SK hynix and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63AFR-G7A
H5TC4G63AFR-G7A - 4Gb DDR3L SDRAM 1.35V | SK Hynix
H5TC4G63AFR-G7A β ActiveSamsung Electronics
K4B4G1646D-BYK00
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 β ActiveSpecification Comparison
| Parameter | H5TC4G63AFR-G7A | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $7.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35 V (also operates at 1.5 V) |
| Data Rate | 1600 Mbps (PC3-12800) | 1600 Mbps |
| Package | 96-ball FBGA | 96-ball TFBGA |
| Operating Temperature | 0Β°C to 95Β°C (case) | 0Β°C to 85Β°C |
| CAS Latency | Programmable (e.g., 11) | Programmable |
| Burst Length | 8 and 4 | β |
| Refresh Period | 7.8us at 85Β°C | β |
| On-Die Termination | Supported | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Process Technology | CMOS | β |
| Number of Terminals | β | 96 |
| Additional Features | β | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Package Shape | β | RECTANGULAR |
| Temperature Grade | β | OTHER |