H5TC4G63MFR-PBA vs NT5CC256M16DP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63MFR-PBA sa pamamagitan ng SK hynix at NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63MFR-PBA | NT5CC256M16DP-DI |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1600 Mbps/pin (800MHz) |
| Packhaging | 96-ball FBGA | VFBGA-96 |
| Number of Banks | 8 | 8 |
| Burst Length | BL8, BL4 (with burst chop) | 8, 4 (with burst chop) |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Volte ng Pagbibigay | — | 1.35V |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C (industrial) |
| Latensya ng CAS | — | 11, 12, 13 (programmable) |
| Interface | — | Differential clock (CK, CK#) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes (ODT) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |