IAUCN08S7L013ATMA1 vs ISC011N04NM7VATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L013ATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN08S7L013ATMA1 ✓ NakahandaInfineon
ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L013ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| Patuloy na Drain Current (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | 136 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| Packhaging | PG-TDSON-8-53 (TDSON-8 FL) | PG-TDSON-8 (source-down) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Qualification | AEC-Q101 (automotive) | — |
| Tindminan RoHS | Compliant | — |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |