IAUCN08S7L013ATMA1 vs ISC011N04NM7VATMA1 比較
詳細並排比較 IAUCN08S7L013ATMA1 由 Infineon 與 ISC011N04NM7VATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN08S7L013ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| 連續汲極電流 (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | 136 W |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | — |
| Gate Drive Voltage (typical) | 10 V | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| 封裝 | PG-TDSON-8-53 (TDSON-8 FL) | PG-TDSON-8 (source-down) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Qualification | AEC-Q101 (automotive) | — |
| RoHS 狀態 | Compliant | — |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |