IGI60L5050B1MXUMA1 vs IGI65D1414A3MSXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGI60L5050B1MXUMA1 sa pamamagitan ng Infineon at IGI65D1414A3MSXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ NakahandaInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IGI60L5050B1MXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | GaN (Gallium Nitride), enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Configuration | Half-bridge (high-side + low-side switch with integrated gate driver) | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-State Resistance (RDS(on)) per switch | 500 mΩ (0.5 Ω) | — |
| Number of GaN Switches | 2 | — |
| Gate Driver Source Current | +0.29 A | — |
| Gate Driver Sink Current | -0.7 A | — |
| Integrated Bootstrap Diode | Yes (ultra-fast, low-resistance) | — |
| Turn-on / Turn-off dV/dt | Application-configurable (via gate resistor) | — |
| Packhaging | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Bilang ng Pin | 27 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40 °C to +125 °C (junction 150 °C) | — |
| Tindminan RoHS | Compliant | — |
| Reach Status | Compliant | — |
| Lead-Free | Yes | — |
| Target Applications | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN™ HEMT |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |