IPA60R190C6XKSA1 vs IPW60R080P7XKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPA60R190C6XKSA1 sa pamamagitan ng Infineon at IPW60R080P7XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon
IPW60R080P7XKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPA60R190C6XKSA1 | IPW60R080P7XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P7 |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg value] |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 C to +150 C (junction) |
| Packhaging | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO247-3 (TO-247, 3-pin through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Continuous Drain Current (ID, Tc) | — | 37 A |
| Power Dissipation (PD, Tc) | — | 129 W |
| RDS(on) (typ) | — | 69 mΩ at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V (typ, per datasheet family) |
| Rise Time / Fall Time (tr/tf) | — | [DATA_NEEDED: tr/tf value] |
| Packaging | — | Tube (XKSA1 ordering suffix) |