IPA60R190C6XKSA1 vs IPW60R080P7XKSA1 Comparison
Detailed side-by-side comparison of IPA60R190C6XKSA1 by Infineon and IPW60R080P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPA60R190C6XKSA1 | IPW60R080P7XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P7 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (junction) |
| Package | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO247-3 (TO-247, 3-pin through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | — |
| Continuous Drain Current (ID, Tc) | — | 37 A |
| Power Dissipation (PD, Tc) | — | 129 W |
| RDS(on) (typ) | — | 69 mΩ at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V (typ, per datasheet family) |
| Rise Time / Fall Time (tr/tf) | — | [DATA_NEEDED: tr/tf value] |
| Packaging | — | Tube (XKSA1 ordering suffix) |