IPB014N06NATMA1 vs IPB60R040CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB014N06NATMA1 sa pamamagitan ng Infineon at IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
IPB014N06NATMA1 ✓ NakahandaInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB014N06NATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $5.19 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID) at Ta | 34 A | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| On-Resistance RDS(on) max | 1.4 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO263-7 (D2PAK-7) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) | Superjunction (SJ) N-Channel MOSFET |
| Avalanche Rating | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | — |
| Primary Application | Synchronous rectification, motor control | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Pwersang Pinahihigpit (TC=25°C) | — | 227 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Level ng MSL | — | 1 |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |