IPB014N06NATMA1 vs IPB60R040CFD7ATMA1 比較

詳細並排比較 IPB014N06NATMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 IPB014N06NATMA1 IPB60R040CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $5.19
Transistor Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 600 V
Continuous Drain Current (ID) at Ta 34 A —
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 214 W —
On-Resistance RDS(on) max 1.4 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
工作接面溫度 -55 °C to +175 °C —
封裝 PG-TO263-7 (D2PAK-7) PG-TO263-3-2 (D2PAK)
安裝類型 Surface Mount Surface Mount
Technology OptiMOS 5 (trench-gate) Superjunction (SJ) N-Channel MOSFET
Avalanche Rating 100% avalanche tested —
Qualification JEDEC qualified for target applications —
Primary Application Synchronous rectification, motor control —
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
功率耗散 (TC=25°C) — 227 W
工作溫度範圍 — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
MSL 等級 — 1
RoHS 狀態 — Compliant
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

資料表與資源

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