IPB100N04S4H2ATMA1 vs IAUC100N04S6N022ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB100N04S4H2ATMA1 sa pamamagitan ng Infineon at IAUC100N04S6N022ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ NakahandaInfineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB100N04S4H2ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Packhaging | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8 (5x6 mm) leadless |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 (IAUC family) |
| RoHS Compliance | Compliant (Green Product) | — |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Power Dissipation (P_D, Tc) | — | 75 W |
| R_DS(on) (typ at V_GS=10V) | — | 2.2 mOhm |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (junction) |
| Polarity | — | N-Channel enhancement mode |
| Bilang ng Pin | — | 8 |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | [DATA_NEEDED: total gate charge] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |