IPC50N04S55R8ATMA1 vs IPC100N04S51R7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPC50N04S55R8ATMA1 sa pamamagitan ng Infineon at IPC100N04S51R7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ Nakahanda
Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPC50N04S55R8ATMA1 IPC100N04S51R7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at Tc 50 A —
Power Dissipation (P_D) at Tc 42 W —
R_DS(on) Max (V_GS=10V) 5.8 mΩ —
Output Capacitance (C_oss) 305 pF —
Gate Threshold (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8-33 (TDSON EP) PG-TDSON-8-34 (SS08 leadless)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (260 °C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
RoHS / Green RoHS compliant, Green Product —
Polarity Enhancement Mode —
Manufacturer — Infineon Technologies
Series — OptiMOS-5
Uri ng Transistor — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
AEC-Q101 Qualified — Yes
Avalanche Tested — 100% tested
Tindminan RoHS — Compliant (Green Product)
Built-in Body Diode — Yes

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