IPC50N04S55R8ATMA1 vs IPC100N04S51R7ATMA1 比較
詳細並排比較 IPC50N04S55R8ATMA1 由 Infineon 與 IPC100N04S51R7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPC50N04S55R8ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at Tc | 50 A | — |
| Power Dissipation (P_D) at Tc | 42 W | — |
| R_DS(on) Max (V_GS=10V) | 5.8 mΩ | — |
| Output Capacitance (C_oss) | 305 pF | — |
| Gate Threshold (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-TDSON-8-33 (TDSON EP) | PG-TDSON-8-34 (SS08 leadless) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260 °C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / Green | RoHS compliant, Green Product | — |
| Polarity | Enhancement Mode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| 電晶體類型 | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| RoHS 狀態 | — | Compliant (Green Product) |
| Built-in Body Diode | — | Yes |