IPD046N08N5ATMA1 vs ISC016N08NM8ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD046N08N5ATMA1 sa pamamagitan ng Infineon at ISC016N08NM8ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD046N08N5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | OptiMOS 8 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Hanay ng Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging / Kaso | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Tindminan RoHS | ROHS3 Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (junction) |
| Packhaging | — | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |