IPD35N10S3L26ATMA1 vs IPD35N10S3L26ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD35N10S3L26ATMA1 sa pamamagitan ng Infineon at IPD35N10S3L26ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 ✓ NakahandaInfineon
IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD35N10S3L26ATMA1 | IPD35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | Trench MOSFET (OptiMOS-T) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260°C peak reflow) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| Product Family | — | OptiMOS-T |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | — | 24 mOhm |
| Power Dissipation (Ptot, Tc) | — | 71 W |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: gate threshold typical/range] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Tj min/max] |
| Bilang ng Pin | — | 3 (Drain, Source, Gate + tab) |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |