IPD35N10S3L26ATMA2 vs IPD70N10S312ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD35N10S3L26ATMA2 sa pamamagitan ng Infineon at IPD70N10S312ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD35N10S3L26ATMA2 IPD70N10S312ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 35 A 70 A
On-Resistance R<sub>DS(on)</sub> max 24 mOhm —
Power Dissipation (Ptot, Tc) 71 W —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: gate threshold typical/range] —
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj min/max] -55C to +175C
Packhaging PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Bilang ng Pin 3 (Drain, Source, Gate + tab) 3 (Gate, Drain, Source)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Technology Trench MOSFET (OptiMOS-T) OptiMOS-T Power-MOSFET (N-Channel)
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] 1 (unlimited floor life)
Part Number — IPD70N10S312ATMA2
Power Dissipation (Ptot, Tc=25C) — 125 W
On-State Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Channel Type — N-Channel Enhancement Mode
Avalanche Rated — Yes

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