IPD60R180P7ATMA1 vs IPD50N06S409ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R180P7ATMA1 sa pamamagitan ng Infineon at IPD50N06S409ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R180P7ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | -55 °C to +175 °C |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Bilang ng Pin | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |