IPD60R180P7ATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD60R180P7ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R180P7ATMA1 IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPD60R180P7ATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.81 $0.49
Manufacturer Infineon Technologies β€”
Product Family CoolMOS P7 β€”
Technology Superjunction (SJ) N-channel MOSFET N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID) at TC=25C 18 A β€”
On-Resistance RDS(on) max at VGS=10V 180 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V [DATA_NEEDED: VGS max rating]
Total Power Dissipation (PD) at TC=25C 72 W β€”
Operating Junction Temperature -55C to +150C -55 Β°C to +175 Β°C
Package PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Shipping Package Tape and Reel (ATMA1 suffix) β€”
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Pin Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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