IPD60R180P7ATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPD60R180P7ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R180P7ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| Operating Junction Temperature | -55C to +150C | -55 °C to +175 °C |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Pin Count | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |