IPD60R280P7SAUMA1 vs IPD60R380C6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R280P7SAUMA1 sa pamamagitan ng Infineon at IPD60R380C6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ Nakahanda
Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD60R280P7SAUMA1 IPD60R380C6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 12 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: gate threshold voltage]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C -55C to +150C
Technology CoolMOS P7 Superjunction (SJ) N-channel CoolMOS C6 Superjunction
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 [DATA_NEEDED: MSL level]
Series CoolMOS P7 (7th generation, 600 V) —
Tindminan RoHS Compliant Compliant
Integrated ESD Protection Yes —
Continuous Drain Current (ID) at TC=25C — 10.6 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V — 380 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C — 83 W
Storage Temperature — [DATA_NEEDED: storage temperature]
FET Type — N-Channel
Drain-Tab Connection — Exposed pad (electrically connected to drain)

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