IPD60R280P7SAUMA1 vs IPD60R380C6ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD60R280P7SAUMA1 tarafından Infineon ve IPD60R380C6ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPD60R280P7SAUMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: gate threshold voltage] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | -55C to +150C |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | CoolMOS C6 Superjunction |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 | [DATA_NEEDED: MSL level] |
| Series | CoolMOS P7 (7th generation, 600 V) | — |
| RoHS Durumu | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| FET Type | — | N-Channel |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |