IPL60R285P7AUMA1 vs IAUCN08S7L033ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R285P7AUMA1 sa pamamagitan ng Infineon at IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R285P7AUMA1 - 600V 285mΩ 13A CoolMOS P7 MOSFET | Infineon
IPL60R285P7AUMA1 ✓ NakahandaInfineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R285P7AUMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | Automotive OptiMOS 7 |
| Technology | Superjunction (SJ) N-channel MOSFET | OptiMOS 7 trench MOSFET |
| Drain-to-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 285 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Output Capacitance (Coss) typ | [DATA_NEEDED: Coss value] | — |
| Maximum Power Dissition (PD) at Tc=25C | 59 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55°C to +175°C (TJ) |
| Packhaging / Kaso | PG-VSON-4 (surface mount) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-channel, 4 pins (Gate, Drain, Source, Tab) | — |
| Tindminan RoHS | Compliant | Compliant |
| Gate ESD Protection | Integrated | — |
| Level ng MSL | 1 (per Infineon PG-VSON-4 family) | 1 (per JEDEC J-STD-020, typical for this package) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Packhaging | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |