IPL60R285P7AUMA1 vs IAUCN08S7L033ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPL60R285P7AUMA1 tarafından Infineon ve IAUCN08S7L033ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPL60R285P7AUMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | Automotive OptiMOS 7 |
| Technology | Superjunction (SJ) N-channel MOSFET | OptiMOS 7 trench MOSFET |
| Drain-to-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 285 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Output Capacitance (Coss) typ | [DATA_NEEDED: Coss value] | — |
| Maximum Power Dissition (PD) at Tc=25C | 59 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55°C to +175°C (TJ) |
| Paket / Kas | PG-VSON-4 (surface mount) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-channel, 4 pins (Gate, Drain, Source, Tab) | — |
| RoHS Durumu | Compliant | Compliant |
| Gate ESD Protection | Integrated | — |
| MSL Seviyesi | 1 (per Infineon PG-VSON-4 family) | 1 (per JEDEC J-STD-020, typical for this package) |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Paket | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |