IPL65R200CFD7AUMA1 vs IPL60R105P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R200CFD7AUMA1 sa pamamagitan ng Infineon at IPL60R105P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL65R200CFD7AUMA1 IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL65R200CFD7AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS CFD7 CoolMOS P7
FET Type N-Channel —
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID, Tc) 14 A —
Power Dissipation (PD, Tc) 81 W —
On-Resistance (RDS(on)) 0.2 ohm at VGS=10V, ID=5.2A —
Gate Threshold Voltage (VGS(th)) 3.5 V —
Technology CoolMOS Superjunction (SJ) Superjunction (SJ) N-Channel Power MOSFET
Packhaging PG-VSON-4 PG-VSON-4 (4-pin SMD with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C (TJ) —
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] —
Body Diode Fast-recovery intrinsic —
Gate-Source ESD Protection Yes (integrated) —
Tindminan RoHS Compliant Compliant
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Hanay ng Temperature na Operasyon — -55C to +150C
Channel Type — N-Channel
Level ng MSL — [DATA_NEEDED: MSL rating]
Wala sa Halogen — Yes
Lead-Free — Yes

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