IPTC039N15NM5ATMA1 vs IQE220N15NM5CGSCATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPTC039N15NM5ATMA1 sa pamamagitan ng Infineon at IQE220N15NM5CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPTC039N15NM5ATMA1 IQE220N15NM5CGSCATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 5
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Ta 21 A —
Continuous Drain Current (ID) at Tc 190 A —
Power Dissipation (PD) at Ta 3.8 W —
Power Dissipation (PD) at Tc 319 W —
On-Resistance RDS(on) typical 3.9 mOhm —
Gate Charge Qg typical 74 nC —
Maximum Gate-Source Voltage (VGS) 20 V —
Temperature na Operasyon -55 C to +175 C (junction) —
Packhaging PG-HDSOP-16-2 (top-side cooled) PG-WHTFN-9 (Source-Down)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 trench OptiMOS 5, Source-Down
Cooling Top-side cooled (case above PCB) —
Tindminan RoHS Compliant Compliant
FET Type — N-Channel
Continuous Drain Current at Ta (ID) — 7 A
Continuous Drain Current at Tc (ID) — 44 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 100 W
On-Resistance (RDS(on)) — 22 milliohm (max)
Gate Threshold Voltage (VGS(th)) — 4.6 V
Hanay ng Temperature na Operasyon — -55C to +150C (junction)

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