IQE008N03LM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE008N03LM5CGSCATMA1 sa pamamagitan ng Infineon at IQEH50NE2LM7UCGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ NakahandaInfineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE008N03LM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 Power-Transistor |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | 25 V |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Packhaging | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9-1 (surface mount) |
| Uri ng Pagpapasok | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Silicon N-Channel Power MOSFET |
| Polarity | N-Channel | — |
| Bilang ng Pins | 9 (WHTFN with exposed thermal pads) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| Tindminan RoHS | Compliant | — |
| Wala sa Halogen | Yes (Infineon standard for OptiMOS 5) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |