IQE012N03LM5CGATMA1 vs IQE013N04LM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon at IQE013N04LM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE012N03LM5CGATMA1 IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQE012N03LM5CGATMA1 IQE013N04LM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID, Ta) 34 A —
Pulsed Drain Current (IDM, Tc) 224 A —
On-Resistance RDS(on), typ 1.20 mOhm —
Gate-Source Threshold VGS(th) 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 107 W 107 W
Technology / Process OptiMOS 5 trench —
Packhaging PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 C to +150 C (TJ) —
Gate Drive (recommended) 10 V (logic-level compatible) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 —
Technology — OptiMOS N-channel trench MOSFET
Polarity — N-Channel
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (Ta) — 31 A
Continuous Drain Current (Tc) — 205 A
On-Resistance RDS(on) max — [DATA_NEEDED: RDS(on) max value at VGS=10V]
On-Resistance RDS(on) typ — 1.35 mΩ @ VGS=10 V, ID=20 A
Gate Threshold Voltage (VGS(th)) — 2 V (typ)
Hanay ng Temperature na Operasyon — -55 °C to +175 °C
Source-Down Topology — Yes (flip-chip die attach, drain on top thermal pad)

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