IRF1010EPBF vs IRFB4110PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF1010EPBF sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF1010EPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $1.55 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) | 84 A at Tc | — |
| Power Dissipation (PD) | 200 W at Tc | — |
| On-Resistance (RDS(on)) | 12 mOhm | — |
| Total Gate Charge (Qg) | 86.6 nC | — |
| Technology | HEXFET Power MOSFET | HEXFET (planar DMOS) |
| Packhaging | TO-220AB | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Tindminan RoHS | RoHS3 Compliant | Compliant (Pb-free suffix) |
| Level ng MSL | 3 (168 Hours) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Rise Time / Fall Time | [DATA_NEEDED: switching times] | — |
| Thermal Resistance (RthJC) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 4.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |