IRF1407PBF vs IRF1010EPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF1407PBF sa pamamagitan ng Infineon at IRF1010EPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF1010EPBF IRF1010EPBF - 60V 84A N-Channel Power MOSFET | Infineon

IRF1010EPBF - 60V 84A N-Channel Power MOSFET | Infineon

IRF1010EPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF1407PBF IRF1010EPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology HEXFET (stripe-planar MOSFET) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 75 V 60 V
Continuous Drain Current (ID) at TC=25C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 330 W —
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] —
Gate Charge (Qg) 160 nC (typical) —
Maximum Junction Temperature 175 C —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-220AB (through-hole, 3 leads) TO-220AB
Uri ng Pagpapasok Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) —
Avalanche Rating Repetitive avalanche rated —
Polarity — N-Channel
Continuous Drain Current (ID) — 84 A at Tc
Power Dissipation (PD) — 200 W at Tc
On-Resistance (RDS(on)) — 12 mOhm
Total Gate Charge (Qg) — 86.6 nC
Configuration — Single FET
Tindminan RoHS — RoHS3 Compliant
Level ng MSL — 3 (168 Hours)
Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Rise Time / Fall Time — [DATA_NEEDED: switching times]
Thermal Resistance (RthJC) — [DATA_NEEDED: thermal resistance junction to case]
Input Capacitance (Ciss) — [DATA_NEEDED: input capacitance]

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