IRF530NSTRLPBF vs IRF540NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF530NSTRLPBF sa pamamagitan ng Infineon at IRF540NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF530NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 17 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 90 mOhm | — |
| Total Gate Charge (Qg) | 24.7 nC | — |
| Power Dissipation (Pd) at Tc=25C | 70 W | 130 W |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Package Type | D2PAK (TO-263), 3-pin (2 + tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar Stripe Cell) | HEXFET (IR MOSFET) |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +175 C |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant | — |
| Qualification Market | Industrial | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Packhaging | — | D2PAK (TO-263), surface mount |
| Packaging | — | Tape & Reel (13-inch reel) |
| Tindminan RoHS | — | Compliant (Pb-free) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |