IRF530NSTRLPBF vs IRF540NSTRLPBF Comparison
Detailed side-by-side comparison of IRF530NSTRLPBF by Infineon and IRF540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF530NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 17 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 90 mOhm | — |
| Total Gate Charge (Qg) | 24.7 nC | — |
| Power Dissipation (Pd) at Tc=25C | 70 W | 130 W |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Package Type | D2PAK (TO-263), 3-pin (2 + tab) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar Stripe Cell) | HEXFET (IR MOSFET) |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant | — |
| Qualification Market | Industrial | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Package | — | D2PAK (TO-263), surface mount |
| Packaging | — | Tape & Reel (13-inch reel) |
| RoHS Status | — | Compliant (Pb-free) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |