IRF7342TRPBF vs IRF7342PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7342TRPBF sa pamamagitan ng Infineon at IRF7342PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF7342PBF - 55V Dual P-Channel HEXFET MOSFET, 3.4A, SO-8 | Infineon
IRF7342PBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF7342TRPBF | IRF7342PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IRF7342TRPBF | IRF7342PBF |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Technology | HEXFET Power MOSFET (Fifth Generation), P-Channel | HEXFET (Gen V) - P-Channel MOSFET Array |
| Configuration | Dual P-Channel MOSFET Array (two independent P-FETs in one package) | Dual P-Channel (2 independent MOSFETs) |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) | -3.4 A at 25 C | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -3.0 V (typ -1.7 V) | — |
| Drain-Source On-Resistance (RDS(on)) | 0.105 ohm max at VGS = -10 V | — |
| Maximum Power Dissumption (Pd) | 2 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (Tj) | [DATA_NEEDED: operating temperature range] |
| Packhaging | 8-SOIC (SO-8), surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free, RoHS compliant) | — |
| Channel Type | P-Channel (enhancement mode) | — |
| Number of Channels | 2 (dual array) | — |
| Original Mfr | — | International Rectifier (now Infineon) |
| Drain-Source Voltage V(DSS) | — | -55 V |
| Continuous Drain Current I(D) | — | 3.4 A |
| On-Resistance R(DS(on)) | — | 0.105 ohm |
| Power Dissipation P(D) | — | 2 W |
| Packhaging / Kaso | — | 8-SOIC (SO-8) |
| Gate Threshold Vgs(th) | — | [DATA_NEEDED: Vgs(th)] |
| Switching Frequency Optimization | — | < 100 kHz |
| Tindminan RoHS | — | Compliant |
| Halogen Status | — | Halogen-Free |
| Qualification | — | JEDEC standard |