IRF7854TRPBF vs IRF7103TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7854TRPBF sa pamamagitan ng Infineon at IRF7103TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7854TRPBF IRF7103TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) $0.48 —
FET Type N-Channel Dual N-Channel
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25°C 10 A —
Power Dissipation (PD) at Ta=25°C 2.5 W —
On-Resistance RDS(on) max at VGS=10V 13.4 mΩ —
Gate-Source Threshold Voltage VGS(th) max 4.9 V —
Total Gate Charge Qg 27 nC —
Packhaging SO-8 SO-8 (PG-DSO-8-902)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (planar N-channel) IR MOSFET™ (HEXFET equivalent)
Hanay ng Temperature na Operasyon -55°C to +150°C (TJ) -55C to +150C (TJ)
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Qualification JEDEC industrial, Normal level —
Solder Process Reflow and wave-solderable —
Gate Drive Voltage (recommended) 10 V —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7103TRPBF
Configuration — Common Source, Dual Die
Drain-to-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 3 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM value]
On-Resistance RDS(on) max — 130 mOhm @ VGS=10V
On-Resistance RDS(on) typ — 0.11 ohm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Power Dissipation (PD) — 2 W
Soldering Method — Vapour phase, infrared, wave soldering
Level ng MSL — 1
Lead-Free — Yes (Pb-free per TRPBF suffix)
Tindminan RoHS — Compliant

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