IRF7854TRPBF vs IRF7103TRPBF 比較
詳細並排比較 IRF7854TRPBF 由 Infineon 與 IRF7103TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7854TRPBF | IRF7103TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $0.48 | — |
| FET Type | N-Channel | Dual N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| 封裝 | SO-8 | SO-8 (PG-DSO-8-902) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET™ (HEXFET equivalent) |
| 工作溫度範圍 | -55°C to +150°C (TJ) | -55C to +150C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7103TRPBF |
| Configuration | — | Common Source, Dual Die |
| Drain-to-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| On-Resistance RDS(on) max | — | 130 mOhm @ VGS=10V |
| On-Resistance RDS(on) typ | — | 0.11 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Power Dissipation (PD) | — | 2 W |
| Soldering Method | — | Vapour phase, infrared, wave soldering |
| MSL 等級 | — | 1 |
| Lead-Free | — | Yes (Pb-free per TRPBF suffix) |
| RoHS 狀態 | — | Compliant |