IRF7854TRPBF vs IRF7103TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF7854TRPBF tarafından Infineon ve IRF7103TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF7854TRPBF | IRF7103TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Birim Fiyat (USD) | $0,48 | — |
| FET Type | N-Channel | Dual N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Paket | SO-8 | SO-8 (PG-DSO-8-902) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET™ (HEXFET equivalent) |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C (TJ) | -55C to +150C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7103TRPBF |
| Configuration | — | Common Source, Dual Die |
| Drain-to-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| On-Resistance RDS(on) max | — | 130 mOhm @ VGS=10V |
| On-Resistance RDS(on) typ | — | 0.11 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Power Dissipation (PD) | — | 2 W |
| Soldering Method | — | Vapour phase, infrared, wave soldering |
| MSL Seviyesi | — | 1 |
| Lead-Free | — | Yes (Pb-free per TRPBF suffix) |
| RoHS Durumu | — | Compliant |