IRFH5015TRPBF vs IPP069N20NM6AKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFH5015TRPBF sa pamamagitan ng Infineon at IPP069N20NM6AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFH5015TRPBF | IPP069N20NM6AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | 56 A | 136 A |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Packhaging | 8-PQFN (5x6) SuperSO8 | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Configuration | Single with built-in body diode | — |
| Temperature na Operasyon | -55C to +150C (TJ max) | — |
| Tindminan RoHS | Compliant | Compliant |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Lead-Free | — | Yes |
| Level ng MSL | — | N/A (through-hole package) |
| Tab Connection | — | Electrically connected to Drain |