IRFH6200TRPBF vs IRFH5015TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFH6200TRPBF sa pamamagitan ng Infineon at IRFH5015TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFH6200TRPBF - 20V N-Ch StrongIRFET MOSFET, 8-PQFN 5x6 | Infineon
IRFH6200TRPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFH6200TRPBF | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFH6200TRPBF | — |
| Technology | StrongIRFET (trench N-channel) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mOhm | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max rating] | — |
| Total Gate Charge (Qg) | 155 nC | 33 nC |
| Power Dissipation at Ta (25C) | 3.6 W | — |
| Power Dissipation at Tc (25C) | 156 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | 8-PQFN 5x6 mm (Power QFN) | 8-PQFN (5x6) SuperSO8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (TRPBF suffix = Pb-free T&R) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | — |
| Channel Type | N-Channel enhancement mode | — |
| Avalanche Energy Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Temperature na Operasyon | — | -55C to +150C (TJ max) |
| Tindminan RoHS | — | Compliant |