IRFH8201TRPBF vs IRFH7084TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFH8201TRPBF sa pamamagitan ng Infineon at IRFH7084TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFH8201TRPBF | IRFH7084TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET (trench MOSFET) | StrongIRFET™ (trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 49 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 324 A | — |
| RDS(on) max at VGS=10V | 0.95 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | — |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55°C to +175°C (TJ) |
| Packhaging | SuperSO8 5x6 (PQFN-8) with exposed pad | 8-PQFN 5x6 mm (SuperSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | — | 100 A |
| Silicon-Limited Drain Current | — | 265 A |
| Power Dissipation (PD, Tc=25°C) | — | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | — | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | — | 6560 pF |
| Wala sa Halogen | — | Compliant |
| RthJC max | — | 0.96 °C/W (per datasheet) |