IRFP2907PBF vs IPW60R041C6FKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP2907PBF sa pamamagitan ng Infineon at IPW60R041C6FKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFP2907PBF IPW60R041C6FKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo NRND
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) CoolMOS™ C6 (Superjunction N-channel)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
Bilang ng Pin 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes Yes
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]
Hanay ng Temperature na Operasyon — -55°C to +150°C
Packhaging — PG-TO247-3-1 (TO-247-3)
Uri ng Pagpapasok — Through Hole
Level ng MSL — Not Applicable (Through-hole)
Tindminan RoHS — Compliant

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita