IRFP2907PBF vs IPW60R041C6FKSA1 Comparison

Detailed side-by-side comparison of IRFP2907PBF by Infineon and IPW60R041C6FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP2907PBF IPW60R041C6FKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Nrnd
Stock Status In Stock In Stock
Unit Price (USD) $2.45 $5.40
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRFP2907PBF β€”
Technology HEXFET Stripe Planar DMOS (N-Channel) CoolMOSβ„’ C6 (Superjunction N-channel)
Drain-to-Source Voltage (V_DSS) 75 V β€”
Continuous Drain Current (I_D) at T_C = 25 C 209 A β€”
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V β€”
Power Dissipation (P_D) at T_C = 25 C 470 W β€”
Total Gate Charge (Q_g) 410 nC β€”
Maximum Junction Operating Temperature +175 C β€”
Package / Mounting Type TO-247AC (Through Hole) β€”
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Compliance Yes (Pb-free) β€”
Avalanche Rated Yes (repetitive avalanche rated) β€”
Body Diode Integral (no external anti-parallel diode required) β€”
Lead-Free Yes Yes
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 77.5 A
Power Dissipation (PD, Tc=25Β°C) β€” 481 W
On-State Resistance (RDS(on)) β€” 41 mΞ© at VGS=10V
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.5 V to 3.5 V typical
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Rise Time (tr) β€” [DATA_NEEDED: tr value]
Fall Time (tf) β€” [DATA_NEEDED: tf value]
Operating Temperature Range β€” -55Β°C to +150Β°C
Package β€” PG-TO247-3-1 (TO-247-3)
Mounting Type β€” Through Hole
MSL Level β€” Not Applicable (Through-hole)
RoHS Status β€” Compliant

Datasheets & Resources

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