IRFR5305TRPBF vs IRF8736TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRPBF sa pamamagitan ng Infineon at IRF8736TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR5305TRPBF | IRF8736TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55C to +150C (junction) |
| Packhaging | TO-252AA (DPAK) | SO-8 (8-SO, MS-012AA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | StrongIRFET / HEXFET |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |