IRFR5305TRPBF vs IRF8736TRPBF 比較

詳細並排比較 IRFR5305TRPBF 由 Infineon 與 IRF8736TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中

規格比較

參數 IRFR5305TRPBF IRF8736TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V 30 V
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作溫度範圍 -55 C to +175 C -55C to +150C (junction)
封裝 TO-252AA (DPAK) SO-8 (8-SO, MS-012AA)
安裝類型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFET / HEXFET
MSL 等級 1 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant (Pb-free PBF suffix) —
Lead-Free Finish Yes (PBF suffix) —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated — Yes (fully characterized avalanche voltage)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

資料表與資源

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