IRFR9024NTRPBF vs IRFR3710ZTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9024NTRPBF sa pamamagitan ng Infineon at IRFR3710ZTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR9024NTRPBF | IRFR3710ZTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $0.17 | — |
| Polarity | P-Channel | — |
| VDS (Drain-Source Voltage) | -55 V | — |
| Continuous Drain Current (Tc=25C) | -11 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed drain current] | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) Max at VGS=-10V | 175 mOhm | — |
| Total Gate Charge (Qg) | 12.7 nC | 69 nC |
| Maximum Power Dissipation (Tc=25C) | 38 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin (2+tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 | — |
| Technology | HEXFET (Gen 5) | MOSFET (Metal Oxide), HEXFET |
| Tindminan RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C (Tc) | — | 42 A |
| Max Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 18 mOhm |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vgs(th) typ) | — | [DATA_NEEDED: Vgs(th)] |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| Avalanche Energy Rating (EAS) | — | 150 mJ |
| Maximum Junction Temperature | — | 175 C |
| Automotive Qualification | — | AEC-Q101 (per Lisleapex listing) |
| Configuration | — | Single with built-in diode |
| Temperature na Operasyon | — | -55 C to +175 C (TJ) |