IRFR9024NTRPBF vs IRFR3710ZTRLPBF 比較

詳細並排比較 IRFR9024NTRPBF 由 Infineon 與 IRFR3710ZTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 啟用中
Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF ✓ 啟用中

規格比較

參數 IRFR9024NTRPBF IRFR3710ZTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) $0.17 —
Polarity P-Channel —
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
脈衝汲極電流 [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC 69 nC
Maximum Power Dissipation (Tc=25C) 38 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) TO-252AA (DPAK), 3-pin (2+tab)
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Technology HEXFET (Gen 5) MOSFET (Metal Oxide), HEXFET
RoHS 狀態 Compliant Compliant (Pb-free PBF suffix)
FET Type — N-Channel
Drain to Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C (Tc) — 42 A
Max Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 18 mOhm
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) — [DATA_NEEDED: Vgs(th)]
Power Dissipation (Pd) @ Tc=25C — 140 W
Avalanche Energy Rating (EAS) — 150 mJ
Maximum Junction Temperature — 175 C
Automotive Qualification — AEC-Q101 (per Lisleapex listing)
Configuration — Single with built-in diode
工作溫度 — -55 C to +175 C (TJ)

資料表與資源

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