IRLR2905TRPBF vs IRLR2705TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR2905TRPBF sa pamamagitan ng Infineon at IRLR2705TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR2905TRPBF | IRLR2705TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (IR MOSFET generation 5) |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A | 28 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | Logic-Level (compatible with 4V drive) |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | 68 W |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +175C |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes |
| Lead-Free / RoHS | Yes / Compliant | Yes (Pb-free, RoHS compliant) |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Gate Drive | Logic-level compatible | — |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C with 1in2 copper] |
| RDS(on) Max at VGS=10V | — | 40 mOhm |
| RDS(on) Max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate-to-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute max, +/-V] |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TA=25C | — | [DATA_NEEDED: PD at TA=25C with 1in2 copper] |