ISC080N10NM6ATMA1 vs IPD33CN10NGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC080N10NM6ATMA1 sa pamamagitan ng Infineon at IPD33CN10NGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 ✓ NakahandaInfineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC080N10NM6ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | [DATA_NEEDED: VGS(th) typical/min/max] |
| Packhaging | PG-TDSON-8 FL (TDSON EP) | PG-TO252-3 (DPAK), Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ max, per datasheet) | -55C to +175C (TJ) |
| Level ng MSL | 1 (per JEDEC J-STD-020, per datasheet) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| Technology | — | OptiMOS (Trench) |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |