ISZ072N06NM6ATMA1 vs ISC060N06NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon at ISC060N06NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ072N06NM6ATMA1 | ISC060N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | [DATA_NEEDED: VGS(th) typ/min/max] |
| Pwersang Pinahihigpit (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Packhaging | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (TDSON-8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C ( Tj max 175C ) | -55C to +175C (junction, per OptiMOS 6 family) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (60V generation) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | [DATA_NEEDED: MSL level] |
| Series | — | OptiMOS 6 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 15.2 A |
| Continuous Drain Current (ID) at Tc | — | 62 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 50 W |
| Configuration | — | Single N-Channel |
| Gate Drive | — | Standard gate drive (10 V VGS recommended for full RDS(on)) |
| On-State Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max in mohm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ/nC] |