K4A4G085WD-BCTD vs H5AN4G8NBJR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCTD sa pamamagitan ng Samsung Electronics at H5AN4G8NBJR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCTD | H5AN4G8NBJR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Die Generation | D-die | — |
| Density | 4 Gb | 4 Gbit |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2666 Mbps/pin | 2400 Mbps (PC2400) |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Packhaging | 78-ball FBGA | TFBGA-78 (11 x 7.5 mm) |
| Ball Pitch | 0.8 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-compatible) | DDR4 (JEDEC) |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (Rohs Code: Yes) |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Technology | — | CMOS DRAM |
| Lifecycle Code | — | Active |
| REACH Compliance | — | Compliant |
| Manufacturer | — | SK Hynix Inc. |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for -UHC speed bin] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x/4x support] |