K4A8G085WB-BCTD vs MT40A1G8SA-062E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCTD sa pamamagitan ng Samsung Electronics at MT40A1G8SA-062E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCTD | MT40A1G8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $8.53 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 |
| Rate ng Data | 2666 Mbps | 3200 MT/s (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V | — |
| Die Revision | B-die | — |
| Packhaging | FBGA-78 (78-ball TFBGA) | 78-ball FBGA (7.5 x 11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | BL8, BC4 (burst chop) |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Mga Karakteristika | ZQ calibration, CRC, CA parity, asynchronous reset | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C (CT range; IT: -40C to +95C) |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| I/O Type | — | 1.2 V pseudo open-drain |