K4A8G085WB-BICR vs MT40A1G8SA-062E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BICR sa pamamagitan ng Samsung Electronics at MT40A1G8SA-062E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BICR | MT40A1G8SA-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 |
| Rate ng Data | 2400 Mbps | 3200 MT/s (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V (VDD/VDDQ) | — |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA (7.5 x 11 mm) |
| Bilang ng Pin | 78 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | — |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| Temperature na Operasyon | — | 0C to +95C (CT range; IT: -40C to +95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| Burst Length | — | BL8, BC4 (burst chop) |
| Mga Karakteristika | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |