K4A8G085WB-BIWE vs MT40A512M16TB-062E:R Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BIWE sa pamamagitan ng Samsung Electronics at MT40A512M16TB-062E:R sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BIWE | MT40A512M16TB-062E:R |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $60.00 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | 8 Gbit (512M x 16) |
| Memory Organization | 1G x 8 | — |
| Rate ng Data | 3200 Mbps | 3200 MT/s |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0°C to +85°C | 0°C to +95°C |
| Packhaging | 78-FBGA | 96-FBGA (7.5x13 mm) |
| Uri ng Pagpapasok | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| Latensya ng CAS | [DATA_NEEDED: CL value] | 22 |
| Refresh | Auto-refresh, self-refresh | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Clock Frequency | — | 1600 MHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Width ng Data Bus | — | 16 bits |
| Refresh Time | — | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| I/O Type | — | 1.2V pseudo open-drain |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |