K4A8G085WC-BCTD vs K4A8G085WC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BCTD sa pamamagitan ng Samsung Electronics at K4A8G085WC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Huling Pagbili
Samsung Electronics
K4A8G085WC K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K4A8G085WC-BCTD K4A8G085WC
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Huling Pagbili Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gbit
Organisasyon 1G x 8 1G x 8
Rate ng Data 2666 Mbps (PC4-2133) —
Supply Voltage (VDD/VDDQ) 1.2 V (1.14 V to 1.26 V) —
Packhaging 78-ball FBGA (78FBGA) 78-ball FBGA (78FBGA)
Ball Pitch 0.8 mm —
Temperature na Operasyon 0C to +95C —
Standard Operating Temp Range 0C to +85C —
Burst Length 8 (chop 4) —
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
CRC Function Yes Yes
ZQ Calibration Yes Yes
Dynamic ODT Yes —
Data Mask Yes —
Uri ng Interface Synchronous, parallel —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Speed — 2666 Mbps/pin (DDR4-2666)
Volte ng Pagbibigay — 1.2 V
Supply Voltage Range — 1.14 V to 1.26 V
Clock Frequency — 1333 MHz (1333.333 GHz nominal, per web data)
Operating Temperature (K4A8G085WC-BITD) — -40 C to +95 C
Operating Temperature (K4A8G085WC-BCTD) — 0 C to +95 C
Dynamic On-Chip Termination (ODT) — Yes
Data Mask (DM) — Yes

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